Samsung Electronics, the leading memory chipmaker globally, has refuted a report claiming that its high bandwidth memory (HBM) chips failed Nvidia's tests for use in AI processors. The company stated that the testing for HBM supply is progressing smoothly with various global partners, emphasizing its commitment to continuously testing and verifying the quality and performance of the technology. Samsung also expressed its dedication to enhancing product quality and reliability to provide optimal solutions to customers. This response came in the wake of a Reuters report alleging that Samsung's latest HBM chips were failing Nvidia tests due to heat and power consumption issues, affecting both HBM3 and HBM3E chips. The demand for high-performance memory (HBM) chips, which accelerate data processing speed by vertically connecting multiple DRAM chips, has been rapidly increasing due to the expansion of the artificial intelligence market. Despite losing leadership in the HBM3 market to SK hynix, Samsung has been striving to dominate the next-generation HBM market by assembling top engineers and recently replacing its semiconductor chief to bolster future competitiveness. The company has already commenced mass production of eight-layer HBM3E chips and plans to scale up to 12-layer products in the second quarter, despite experiencing a more than 2 percent drop in its shares following the Reuters report.